WebRBN25H125S1FPQ-A0 R07DS1378EJ0140 Rev.1.40 Page 2 of 11 Aug.03.2024 Absolute Maximum Ratings (Tc = 25°C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1250 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 50 A Tc = 100 C IC 25 A Collector peak current IC(peak) Notes1 100 A Diode forward current Tc = 25 C IF 30 A WebTrench gate and thin wafer technology (G8H series) Built in fast recovery diode in one package. Low collector to emitter saturation voltage V CE (sat) = 1.8 V typ. (at I C = 25 A, …
RBN25H125S1FPQ-A0 1250V - 25A - IGBT
WebRBN25H125S1FPQ-A0. IGBT 1250V 25A TO-247A Built-In FRD. RBN25H125S1FPQ-A0 Datasheet. Power IGBTs (Insulated Gate Bipolar Transistors) Buy / Sample: RAA214220. 20V, 150mA Linear Regulator. RAA214220 Datasheet. Linear Regulators (LDO) Buy / Sample: Support. Contact Technical Support Contact a Sales Representative. WebRenesas Electronics IGBT Transistors are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for Renesas Electronics IGBT Transistors. shankh online shopping
RBN25H125S1FPQ-A0 1250V - 25A - IGBT
WebRBN25H125S1FPQ-A0#CB0 Renesas Electronics IGBT Transistors IGBT-G8H 1250V/25A built-in FRD TO247A datasheet, inventory & pricing. Skip to Main Content +60 4 2991302 WebRBN25H125S1FPQ-A0 R07DS1378EJ0132 Rev.1.32 Page 3 of 11 Jun 19, 2024 Electrical Characteristics (Tc = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter leakage current ICES 200 A VCE = 1250 V, VGE = 0 V Gate to emitter leakage current IGES ±1 A VGE = ±30 V, VCE = 0 V WebBasic Information; Star Product-Series Name: RBNxxH125S1 Series: Number of Channels: Single: Configuration [Device] Built-In FRD: VCES (V) 1250: IC (A) @25 °C polymer inground pool